Two-Temperature Semiconductor Model Photomechanical and Thermal Wave Responses with Moisture Diffusivity Process

In the context of two-temperature thermoelasticity theory, a novel mathematical–physical model is introduced that describes influence moisture diffusivity in semiconductor material. The two-dimensional (2D) Cartesian coordinate used to study coupling between thermo-elastic plasma waves and diffusivity. Dimensionless quantities are taken for main physical fields with some initial conditions Laplace transform domain. linear solutions obtained analytically along unknown variables when loaded at surface homogenous medium according theory. technique inversion form utilized numerical algebraic approximations time domain observe exact expressions. Due effects parameter diffusivity, results silicon material have been introduced. impacts thermoelectric, thermoelastic, reference parameters discussed graphically explanations.